Department of Materials Engineering, The University of Tokyo  KITA RESEARCH GROUP
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PUBLICATIONs

Schedules of Presentations at Coming Conferences

  • Sep 18-22, 2017: International Conference on Silicon Carbide and Related Materials (ICSCRM2017)@Washington DC, USA, D3 Hirai-kun will give an oral talk.
  • Sep 19-22, 2017: International Conference on Solid State Materials and Devices (SSDM2017)@Sendai,Prof. Kita will deliver an invited talk. D3 Fei-kun, D1 Hatmanto-kun, D1 Pankeev-kun, and M1 Ishinoda-kun will give a presentation.
  • Oct 1-6, 2017: The 232nd Electrochemical Soceity (ECS) Meeting@National Harbor, MD, USA, Prof. Kita will give oral presentations.

... and more

Recent Publications & Presentations

< Journals >
  • Jiayang Fei and Koji Kita, “Opportunity of dipole layer formation at non-SiO2 dielectric interfaces in two cases: Multi-cation systems and multi-anion systems”, Microelectronic Engineering,178, 225-229 (2017).
  • Koji Kita, Hirohisa Hirai, Hiroyuki Kajifusa, Kohei Kuroyama, Kei Ishinoda“Investigation of origins of the critically different MOS interface characteristics between dry-oxidized and wet-oxidized silicon carbide”, Microelectronic Engineering, 178, 186-189 (2017).
  • Jiayang Fei, Ryota Kunugi, Takanobu Watanabe and Koji Kita, “Anomalousflatband voltage shift of AlFxOy/Al2O3 MOS capacitors: A consideration on dipole layer formation at dielectric interfaces with different anions”, Appl. Phys. Lett. 110, 162907 (2017).
  • Hirohisa Hirai and Koji Kita, “Difference of near-interface strain in SiO2 between thermal oxides grown on 4H-SiC by dry-O2 oxidation and H2O oxidation characterized by infrared spectroscopy”, Appl. Phys. Lett. 110, 152104 (2017).
  • Hironobu Kamata and Koji Kita, “Design of Al2O3/SiO2 laminated stacks with multiple interface dipole layers to achieve large flatband voltage shifts of MOS capacitors”, Appl. Phys. Lett.110, 102106 (2017).
  • Y. Fujino and K. Kita, “Estimation of near-interface oxide trap density at SiO2/SiC metal-oxide-semiconductor interfaces by transient capacitance measurements at various temperatures”, J. Appl. Phys. 120, 085710 (2016).
  • Jiayang Fei and Koji Kita, “Understanding the impact of interface reaction on dipole strength at MgO/SiO2 and Y2O3/SiO2 interfaces”, Jpn. J. Appl. Phys. 55, 04EB11 (2016).
  • Kosuke Shimura, Ryota Kunugi, Atsushi Ogura, Shinichi Satoh, Jiayang Fei, Koji Kita and Takanobu Watanabe“Positive and negative dipole layer formation at high-k/SiO2 interfaces simulated by classical molecular dynamics”, Jpn. J. Appl. Phys. 55, 04EB03 (2016).
  • Hirohisa Hirai and Koji Kita, “Effects of high-temperature diluted-H2 annealing on effective mobility of 4H-SiC MOSFETs with thermally-grown SiO2”, Jpn. J. Appl. Phys. 55, 04ER15 (2016).
  • Yuki Fujino and Koji Kita, “Quantitative Characterization of Near-Interface Oxide Traps in 4H-SiC MOS Capacitors by Transient Capacitance Measurements”, ECS Trans, 69 (5) 219-225 (2015).
  • Hirohisa Hirai and Koji Kita, "Suppression of byproduct generation at 4H-SiC/SiO2 interface by the control of oxidation conditions characterized by infrared spectroscopy", Appl. Phys. Express 8, 021401 (2015).
  • Koji Kita, Richard Heihachiro Kikuchi, Hirohisa Hirai, and Yuki Fujino, "Control of 4H-SiC (0001) Thermal Oxidation Process for Reduction of Interface State Density", ECS Trans. 64 (8) 23-28 (2014).
  • Richard Heihachiro Kikuchi and Koji Kita, "Fabrication of SiO2/4H-SiC (0001) Interface with Nearly-Ideal Capacitance-Voltage Characteristics by Thermal Oxidation", Appl. Phys. Lett. 105, 032106 (2014).
  • Koji Kita, Richard Heihachiro Kikuchi, and Hirohisa Hirai, "Understanding of Growth Kinetics of Thermal Oxides on 4H-SiC (0001) for Control of MOS Characteristics", ECS Trans. 61 (2) 135-142 (2014).
  • Richard Heihachiro Kikuchi and Koji Kita, "Interface-reaction-limited growth of thermal oxides on 4H-SiC (0001) in nanometer-thick region", Appl. Phys. Lett. 104, 052106 (2014).
  • Hirohisa Hirai and Koji Kita, "FTIR-ATR Study on Near-Interface Structure of Thermal Oxides on 4H-SiC Substrates", ECS Trans. 58 (7) 317-323 (2013).
  • Jiro Koba and Koji Kita, "Voltage-Induced Nonvolatile Change of Magnetic Anisotropy of CoFeB Ultrathin Films Stacked With Multivalent Oxides", ECS Trans. 58 (5) 127-133 (2013).
  • Hirohisa Hirai and Koji Kita, "Structural difference between near interface oxides grown on Si and C faces of 4H-SiC characterized by infrared spectroscopy", Appl. Phys. Lett. 103, 132106 (2013).
  • W. F. Zhang, T. Nishimula, K. Nagashio, K. Kita, and A. Toriumi, "Conduction Band Offset at GeO2/Ge Interface Determined by Internal Photoemission and Charge-corrected X-ray Photoelectron Spectroscopies", Appl. Phys. Lett. 102, 102106 (2013).
  • Naruto Miyakawa, D. C. Worledge, and Koji Kita, "Impact of Ta Diffusion on the Perpendicular Magnetic Anisotropy of Ta/CoFeB/MgO", IEEE Magnetic Lett. ,4, 1000104 (2013).
  • Yugo Chikata, Koji Kita, Tomonori Nishimura, Kosuke Nagashio, and Akira Toriumi, "Quantitative Characterization of Band-Edge Energy Positions in High-k Dielectrics by X-ray Photoelectron Spectroscopy", Jpn. J. Appl. Phys., 52, 021101 (2013).
  • Koji Kita, David W. Abraham, Martin J. Gajek, and D. C. Worledge, "Electrci-field-control of magnetic anisotropy of Co0.6Fe0.2B0.2/oxide stacks using reduced voltage", J. Appl. Phys., 112, 033919 (2012).
  • Choong Hyun Lee, Tomonori Nishimura, Toshiyuki Tabata, Kosuke Nagashio, Koji Kita, and Akira Toriumi, "Variation of Surface Roughness on Ge Substrate by Cleaning in Deionized Water and its Influence on Electrical Properties in Ge Metal–Oxide–Semiconductor Field-Effect Transistors", Jpn. J. Appl. Phys. 51, 104203 (2012).
  • Shinji Hibino, Tomonori Nishimura, Kosuke Nagashio, Koji Kita, and Akira Toriumi, "Counter Dipole Layer Formation in Multilayer High-k Gate Stacks", Jpn. J. Appl. Phys. 51, 081303 (2012).
< International Conference Presentations >
  • Jiayang Fei and Koji Kita, "Opportunity of dipole layer formation at non-SiO2 dielectric interfaces in two cases: multi-cation systems and multi-anion systems", 20th Conference on Insulating Films on Semiconductors (INFOS2017) (Jun 29, 2017, Potsdom, Germany).
  • Koji Kita, Hirohisa Hirai, Hiroyuki Kajifusa, Kohei Kuroyama and Kei Ishinoda, "Investigation of Origins of the Critically Different MOS Interface Characteristics between Dry-oxidized and Wet-Oxidized Silicon Carbide", 20th Conference on Insulating Films on Semiconductors (INFOS2017) (Jun 28, 2017, Potsdom, Germany).
  • Weidong Li and Koji Kita, "Enhancement of Interface Anisotropy Energy by Fluoride Introduction at CoFeB/Al2O3 and CoFeB/MgO Interfaces", SPINTECH-IX International School and Conference 2017 (Jun4-8, 2017, Fukuoka International Congress Center, Fukuoka).
  • Koji Kita and Hirohisa Hirai, "Impact of Sacrificial Cosumption of Substrate By Thermal Oxidation on Electron Mobility of 4H-SiC MOSFETs", Pacific Rim Meeting on Electrochemcal and Solid State Science / 230th ECS Meeting, "Symposium G02-Semiconductors, Dielectrics, and Metals for Nanoelectronics 14" (Oct. 5, 2016, Honolulu, HI).
  • Koji Kita, "Opportunities to Design Thermal Oxidation and Post-Oxidation Processes to Control 4H-SiC MOS Interface Characteristics", 2016 Int. Conf. on Solid State Devices and Materials (SSDM), E-3-01 (Sep. 28, 2016, Tsukuba), invited.
  • Hiroyuki Kajifusa and Koji Kita, "Study on the Guideline to Control Dry and Wet Oxidation Conditions to Improve 4H-SiC (000-1) C-face MOS Interface Characteristics," 2016 Int. Conf. on Solid State Devices and Materials (SSDM), E-1-02 (Sep. 27, 2016, Tsukuba).
  • Hirohisa Hirai and Koji Kita,"Impacts on 4H-SiC MOSFET Mobility of High Temperatue Annealing in Oxidizing Or Inert Ambient before Gate Oxide Growth," 2016 Int. Conf. on Solid State Devices and Materials (SSDM), E-1-03 (Sep. 27, 2016, Tsukuba).
  • Hironobu Kamata and Koji Kita,"Design of Al2O3/SiO2 Laminated Stacks with Mutiple Interface Dipole Layers to Induce Large Flatband Voltage Shifts of MOS Capacitors," 2016 Int. Conf. on Solid State Devices and Materials (SSDM), O-1-03 (Sep. 27, 2016, Tsukuba).
  • Jiayang Fei, Ryota Kunugi, Takanobu Watanabe and Koji Kita,"Study on Dipole Layer Formation and its Origin at Al2O3/AlFxOy and Al2O3/AlNxOy Multi-anion Dielectric Interfaces by considering Anion Areal Density and Valence Differences," 2016 Int. Conf. on Solid State Devices and Materials (SSDM), O-1-05 (Sep. 27, 2016, Tsukuba).
  • Koji Kita, Hirohisa Hirai, Yuki Fujino and Hiroyuki Kajifusa, "Control of SiC thermal oxidation processes for the improvement of MOSFET performance", 229th Meeting of the Electrochemical Society, (May 29, 2016, San Diego, CA), invited.
  • Ryusuke Oishi and Koji Kita, "Enhancement of voltage-induced magnetic anisotropy change by preventing ferromagnetic surface oxidation in CoFeB/Al2O3 and CoFeB/ZrO2 stacks", 2016 Joint MMM (Magnetism and Magnetic Materials) -Intermag Conference, EG-09 (Jan 14,2016, San Diego, CA, USA).
  • Jiayang Fei and Koji Kita, "Consideration on the Origin of Dipole Layer Formation at Chemically Reactive and Non-Reactive Oxide/SiO2 Interfaces", 2015 Int. Workshop on Dielectric Thin Films for Future Electron Devices (IWDTF2015) (Nov 2, 2015, Tokyo).
  • Yuki Fujino and Koji Kita, "Quantitative Characterization of Near-Interface Oxide Traps in 4H-SiC MOS Capacitors by Transient Capacitance Measurements", 228th Meeting of the Electrochemical Society (Oct. 12, 2015, Phoenix, USA).
  • Hirohisa Hirai and Koji Kita, "Extraction of electron effective mobility of 4H‐SiC MOS inversion channel with thermally‐grown SiO2 by high‐frequency split C‐V technique", 2015 Int. Conf. on Silicon Carbide and Related Materials (ICSCRM2015) (Oct 6, 2015, Giardini Naxos, Italy).
  • Koji Kita, Richard Heihachiro Kikuchi, and Hirohisa Hirai,"Combination of High‐temperature Oxidation and Low‐temperature O2‐Annealing toward Nearly‐Ideal MOS Characteristics on 4H‐SiC (0001)", 2015 Int. Conf. on Silicon Carbide and Related Materials (ICSCRM2015) (Oct 4, 2015, Giardini Naxos, Italy).
  • Jiayang Fei and Koji Kita, "Understanding on the Impact of Interface Reactions on Dipole Strengths at MgO/SiO2 and Y2O3/SiO2 Interfaces", 2015 Int. Conf. on Solid State Devices and Materials (SSDM2015) (Sep 29, 2015, Sapporo).
  • Yuki Fujino and Koji Kita, "Characterization of Near-Interface Oxide Trap Density in SiC MOS Capacitors by Transient Capacitance Measurements at Various Temperatures", 2015 Int. Conf. on Solid State Devices and Materials (SSDM2015) (Sep 29, 2015, Sapporo).
  • Hiroyuki Kajifusa and Koji Kita, "Removal of Near-Interface Oxide Traps at SiO2/SiC Interface by Post-Oxidation Annealing in Reducing Ambient", 2015 Int. Conf. on Solid State Devices and Materials (SSDM2015) (Sep 29, 2015, Sapporo).
  • Hirohisa Hirai and Koji Kita, "Effects of High-Temperature Diluted-H2 Annealing on Effective Mobility of 4H-SiC MOSFETs with Thermally-Grown SiO2", 2015 Int. Conf. on Solid State Devices and Materials (SSDM2015) (Sep 28, 2015, Sapporo).
  • Hirohisa Hirai and Koji Kita, "Infrared Spectroscopic Study on Near-Interface Structure of THermally-Grown Oxides and Oxidation-Induced Byproducts at 4H-SiC/SiO2 Interface", 45th IEEE Semiconductor Interface Specialists Conference (SISC) (Dec 10, 2014, San Diego, USA).
  • Richard Heihachiro Kikuchi and Koji Kita, "Reduction of Defect State Density at SiO2/SiC Interface Formed by the Thermal Oxidation Accompanied with Direct CO Generation", 2014 Int. Conf. on Solid State Devices and Materials (SSDM2014) (Sep 11, 2014, Tsukuba).
  • Hirohisa Hirai and Koji Kita, "Generation and Suppression of Oxidation Byproducts at 4H-SiC C-face/SiO2 Interface Characterized by Infrared Spectroscopy", 2014 Int. Conf. on Solid State Devices and Materials (SSDM2014) (Sep 10, 2014, Tsukuba).
  • Yuki Fujino, Richard Heihachiro Kikuchi, Hirohisa Hirai and Koji Kita, "Quantitative Characterization of Border Traps with Widely-Spread Time Constant in SiC MOS Capacitors by Transient Capacitance Measurements", 2014 Int. Conf. on Solid State Devices and Materials (SSDM2014) (Sep 10,2014, Tsukuba).
  • Koji Kita, "Achievement of Nearly-Ideal MOS Characteristics on 4H-SiC (0001) Based on Kinetic and Thermodynamic Control of Thermal Oxidation", The 18th Workshop on Dielectrics in Microelectronics (WODIM2014) (Jun 10, 2014, Kinsale, Ireland), invited.
  • Koji Kita, Richard Heihachiro Kikuchi, and Hirohisa Hirai, "Understanding of Growth Kinetics of Thermal Oxides on 4H-SiC (0001) for Control of MOS Characteristics", 225th ECS Meeting (May 12, 2014, Orlando, USA), invited.
  • Richard Heihachiro Kikuchi, Hirohisa Hirai, and Koji Kita, "Understanding of Growth Kinetics and Microscopic Structures of Nanometer-Thick Thermal Oxides on 4H-SiC", International Workship on Dielectric Thin Films for Future Electron Devices: Science and Technology (2013 IWDTF), pp.107-108 (Nov. 8, 2013, Tokyo).
  • Jiro Koba and Koji Kita, "Voltage-Induced Nonvolatile Change of Magnetic Anisotropy of CoFeB Ultrathin Films Stacked With Multivalent Oxides", 224th ECS Meeting, in symposium E5 Nonvolatile Memories 2 (Oct. 31, 2013, San Francisco).
  • Hirohisa Hirai and Koji Kita, "FTIR-ATR Study on Near-Interface Structure of Thermal Oxides on 4H-SiC Substrates", 224th ECS Meeting, in symposium E10 Semiconductors, Dielectrics, and Metals for Nanoelectronics 11 (Oct. 30, 2013, San Francisco).
  • Richard Heihachiro Kikuchi and Koji Kita, "Re-investigation of the Post-oxidation Effects on 4H-SiC MOS Interface with High-Temperature Thermal Oxide", Technical Digest of International Conference on Silicon Carbide and Related Materials (ICSCRM2013), p234 (Oct 2, 2013, Miyazaki).
  • Hirohisa Hirai and Koji Kita, "Structural Difference between Near Interface Oxides Grown on Si and C Faces of 4H-SiC Characterized by FTIR-ATR Method", Technical Digest of International Conference on Silicon Carbide and Related Materials (ICSCRM2013), p114 (Oct 1, 2013, Miyazaki).
  • Jiro Koba and Koji Kita, "Voltage–Induced Nonvolatile Change of Magnetic Anisotropy in TiOx/CoFeB/Ta", Extended Abstracts of the 2013 International Conference on Solid State Devices and Materials (SSDM2013), pp. 802-803 (Sep 25, 2013, Fukuoka).
  • Koji Kita, "Voltage Control of Magnetic Anisotropy of Ferromagnetic/Dielectric Stacks"; Collaborative Conference on Material Research 2013 (CCMR2013)
    (Jun 25, 2013, Jeju, Korea), invited.
  • Naruto Miyakawa, Daniel C. Worledge, and Koji Kita, "Enhanced Voltage Control of Magnetic Anisotropy of Ta/CoFeB/MgO by Suppression of Ta Diffusion and CoFeB Surface Oxidation", 12th Joint MMM/Intermag Conference, BF-02 (Chicago, IL, 1/15/2013).
  • Jiro Koba, Takaho Kuribara, Naruto Miyakawa, and Koji Kita, "Characterization of Voltage Control of Magnetic Anisotropy up to 8 MV/cm by Using Substrate Bias Structure", 12th Joint MMM/Intermag Conference, BF-05 (Chicago, IL, 1/15/2013).
  • Koji Kita and D. C. Worledge, "Challenges and Opportunities in Voltage Control of Magnetic Anisotropy of Ultrathin Ferromagnetic Metals for Future Spintronics",International Conference on Emerging Advanced Nanomaterials (ICEAN2012) (Brisbane, Australia, 10/22/2012), invited.
  • S. Hibino, T. Nishimura, K. Nagashio, K. Kita and A. Toriumi, "Interface Dipole Concellation in SiO2/High-k/SiO2/Si Gate Stacks", 2012 Pacific Rim Meeting on Electrochemical and Solid-State Science (PRiME 2012), (Honolulu, HI, 10/9/2012).
  • W. Zhang, T. Nishimura, K. Nagashio, K. Kita and A. Toriumi, "Conduction Band-offset in GeO2/Ge Stack Determined by Internal Photoemission Spectroscopy", 2012 Pacific Rim Meeting on Electrochemical and Solid-State Science (PRiME 2012), (Honolulu, HI, 10/9/2012).
  • Jiro Koba, Takaho Kuribara, Naruto Miyakawa, and Koji Kita, "Voltage Control of Magnetic Anisotropy of CoFeB Thin Films Stacked with Various Oxides", 2nd Int. Conf. of Asian Union of Manetics Societies (ICAUMS2012), (Nara, 10/05/2012).
  • N. Miyakawa, D. C. Worledge, and K. Kita, "Study on Interface Magnetic Anisotropy Deterioration Mechanisms in Ta/CoFeB/MgO stacks" (Kyoto, Sep. 28, 2012).
  • K. Kita, T. Nishimura, K. Nagashio, and A. Toriumi, "Control of Ge/High-k Interface for Ge CMOS Technology", 39th Conference on the Physics and Chemistry of Surfaces and Interfaces (PCSI-39), we1400 (SantaFe, NM, Jan. 25, 2012), invited.
  • K. Kita, T. Nishimura, K. Nagashio, and A. Toriumi, "Study on Interface Reactions in GeO2/Ge Stacks for Gate Stack Application", 31st Hyoumen-Kagaku-Kai (Annual Meeting of the Surface Science Society of Japan), p.172 (Edokawa-ku, Tokyo, Dec 17, 2011), invited.
  • Koji Kita, D. W. Abraham, M. J. Gajek, and D. C. Worledge, "ElectricElectric-field Induced Change of Magnetic Anisotropy in CoFeB/Oxide Stacks", 56th Conference on Magnetism and Magnetic Materials (MMM)(Scottsdale, AZ, 11/02/2011).
  • K. Kita and A. Toriumi, "Study on Dipole Layer Formation between Two Oxides : Experimental Evidences and Possible Models", 2011 MRS Spring Meeting (San Francisco, CA, 04/27/2011), invited.

    Please also see TORIUMI research group web site.

    Please see the Japanse page for the lists of domestic conference papers.


 
 KITA RESEARCH GROUP The University of Tokyo